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AG55

Sanland' AG55 is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) MMIC housed in low-cost surface-mountable plastic package. 

These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot.

These amplifiers are specially designed for use as driver devices for infrastructure equipment in the 400- 4000 MHz cellular, ISM, WLL, PCS, WCDMA applications.

Its high linearity makes it an ideal choice for multi-carrier as well as digital applications.


AG55
AG55
Part Number
AG55
Brief0.5~4GHz Amplifier
PackageSOT89
Gain(dB)15@2GHz
Current(mA)125@5V
P1dB(dBm)28@2GHz
OIP3(dBm)44@2GHz
Noise(dB)5@2GHz
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